- 您現在的位置：買賣IC網 > PDF目錄375769 > FDC633N (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管) PDF資料下載
參數資料
| 型號： | FDC633N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管) |
| 中文描述： | 5200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 278K |
| 代理商： | FDC633N |
FDC633N Rev.C
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 4.5V
1.5
2.0
3.0
2.5
0
5
10
15
20
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
V = 2.0V
R
D
3.0
4.5
3.5
2.5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
15
I
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 4.5V
I = 5.2A
1
2
3
4
5
0
0.03
0.06
0.09
0.12
0.15
V , GATE TO SOURCE VOLTAGE (V)
I = 2.5A
R
D
T = 25°C
T = 125°C
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 5V
J
125°C
25°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| FDC634 | P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | P-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管) |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC633N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC633N_F095 | 功能描述:MOSFET 30V 5.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH 20V 3.5A SSOT6 |
發布緊急采購，3分鐘左右您將得到回復。