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參數資料
| 型號： | FDC633N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管) |
| 中文描述： | 5200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 278K |
| 代理商： | FDC633N |
FDC633N Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.3
1
3
10
30
20
50
100
300
600
1300
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0
3
6
9
12
15
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
V = 5V
10V
I = 5.2A
15V
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
2
5
10
20
40
I
D
RDS(ON) LIMIT
A
T = 25°C
DC
1s
100ms
10ms
1ms
V = 4.5V
SINGLE PULSE
R = See Note 1b
JA
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC633N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC633N_F095 | 功能描述:MOSFET 30V 5.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH 20V 3.5A SSOT6 |
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