- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375769 > FDC634 (Fairchild Semiconductor Corporation) P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | FDC634 |
| 廠商： | Fairchild Semiconductor Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 71K |
| 代理商： | FDC634 |
FDC634P Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
30
30
80
200
600
800
1200
2000
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
I = -3.5A
-15V
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
5
10
20
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
A
DC
1s
100ms
10ms
1ms
V = -4.5V
SINGLE PULSE
R = See Note 1b
T = 25°C
JA
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC634P | P-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管) |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC634P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH 20V 3.5A SSOT6 |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 3.5A SUPER SOT-6 |
| FDC634P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC636P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。