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參數資料
| 型號： | FDD10AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 50A, 10.5mз |
| 中文描述： | 11 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數： | 2/11頁 |
| 文件大小： | 236K |
| 代理商： | FDD10AN06A0 |
2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 8.58mH, I
AS
= 10A.
Device Marking
FDD10AN06A0
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD10AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 25A, V
GS
= 6V
I
D
= 50A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0094 0.0105
0.015
0.027
-
0.020
0.023
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1840
340
110
28
3.5
9.8
6.4
7.8
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 50A
I
g
= 1.0mA
37
4.6
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 50A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
8
131
-
-
-
-
97
ns
ns
ns
ns
ns
ns
79
32
32
-
V
SD
Source to Drain Diode Voltage
I
SD
= 50A
I
SD
= 25A
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
27
23
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD10AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD10AN06A0_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 11A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 50A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / N-Channel PowerTrench MOSFET |
| FDD10AN06A0_NL | 制造商:Fairchild 功能描述:60V/50A N-CH MOSFET |
| FDD10AN06A0_Q | 功能描述:MOSFET 60V 50a .15 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD10AN06A0Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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