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參數(shù)資料
| 型號(hào)： | FDD10AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 50A, 10.5mз |
| 中文描述： | 11 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 236K |
| 代理商： | FDD10AN06A0 |
2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
50
3000
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
25
30
V
G
,
V
DD
= 30V
I
D
= 50A
I
D
= 11A
WAVEFORMS IN
DESCENDING ORDER:
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| FDD12-03S5 | DC-DC CONVERTER |
| FDD12-05D4 | DC-DC CONVERTER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD10AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD10AN06A0_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 11A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 50A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / N-Channel PowerTrench MOSFET |
| FDD10AN06A0_NL | 制造商:Fairchild 功能描述:60V/50A N-CH MOSFET |
| FDD10AN06A0_Q | 功能描述:MOSFET 60V 50a .15 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD10AN06A0Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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