- 您現在的位置：買賣IC網 > PDF目錄375771 > FDD3672 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз PDF資料下載
參數資料
| 型號： | FDD3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз |
| 中文描述： | 6.5 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 233K |
| 代理商： | FDD3672 |
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
F
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
10
20
30
40
50
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
0.01
0.1
1
10
-4
10
-3
t, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
1
2
10
-5
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.2
0.1
0.05
0.02
0.01
0.5
SINGLE PULSE
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
500
30
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
相關PDF資料 |
PDF描述 |
|---|---|
| FDD3680 | FAST SWITCHING DIODE_1N4148_SOD-323__ |
| FDD3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| FDD3690 | DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL |
| FDD3N40 | 400V N-Channel MOSFET |
| FDD3N40TF | 400V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD3672_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ |
| FDD3672_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| FDD3672_F085 | 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3672_Q | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3672-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD3672 Series 100 V 28 mOhm N-Channel UltraFET Trench Mosfet TO-252AB |
發布緊急采購，3分鐘左右您將得到回復。