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參數(shù)資料
| 型號： | FDD3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз |
| 中文描述： | 6.5 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 233K |
| 代理商： | FDD3672 |
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
F
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Drain
Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
1
10
100
0.001
0.01
0.1
1
300
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
20
40
60
80
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
15
20
25
30
35
40
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 44A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3672_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ |
| FDD3672_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| FDD3672_F085 | 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3672_Q | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3672-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD3672 Series 100 V 28 mOhm N-Channel UltraFET Trench Mosfet TO-252AB |
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