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參數資料
| 型號： | FDD4685 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm |
| 中文描述： | 8.4 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 366K |
| 代理商： | FDD4685 |
F
M
FDD4685 Rev.B
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
V
DD
= -30V
V
DD
= -10V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
1
10
2
10
3
10
4
50
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
2
3
4
5
6
7
8
9
10
T
J
= 25
o
C
T
J
= 125
o
C
-
A
,
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
10
20
30
40
50
Limited by Package
R
θ
JC
= 1.8
o
C/W
V
GS
= -4.5V
V
GS
= -10V
-
I
D
,
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
1
10
100
0.1
1
10
100
DC
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
O
C
-
D
,
-VDS, DRAIN to SOURCE VOLTAGE (V)
200
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
50
100
150
200
250
300
V
GS
= -10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
T
c
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
c
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
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| FDD4N60NZ | 功能描述:MOSFET 2.5A Output Current GateDrive Optocopler RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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