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參數(shù)資料
| 型號(hào)： | FDD5614 |
| 廠(chǎng)商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V P-Channel PowerTrench MOSFET |
| 中文描述： | 60V的P溝道PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 81K |
| 代理商： | FDD5614 |
FDD5614P Rev C(W)
Typical Characteristics
0
3
6
9
12
15
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
-3.0V
-2.5V
-4.0V
-4.5V
V
GS
= -10V
-3.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.5V
-4.5V
-5.0V
-4.0V
-10V
-6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -4.5A
V
GS
= -10V
0
0.1
0.2
0.3
0.4
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
125
o
C
V
DS
= -5V
25
o
C
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD5614P | 功能描述:MOSFET 60V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK |
| FDD5614P_05 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET |
| FDD5614P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252 |
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