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參數資料
| 型號： | FDD5614 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V P-Channel PowerTrench MOSFET |
| 中文描述： | 60V的P溝道PowerTrench MOSFET的 |
| 文件頁數： | 5/6頁 |
| 文件大小： | 81K |
| 代理商： | FDD5614 |
FDD5614P Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= -4.5A
V
DS
= -40V
-20V
-30V
0
200
400
600
800
1000
0
10
20
30
40
50
60
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5614P | 功能描述:MOSFET 60V P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK |
| FDD5614P_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET |
| FDD5614P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252 |
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