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參數資料
| 型號： | FDD6612 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel, Logic Level, PowerTrench⑩ MOSFET |
| 中文描述： | N溝道，邏輯層次，⑩的PowerTrench MOSFET的 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 122K |
| 代理商： | FDD6612 |
FDD6612A/FDU6612A Rev. E(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 27 V, I
D
=10 A
51
10
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
25
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
1
2.0
–5.1
3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 9.5 A
I
D
= 8 A
I
D
= 9.5 A, T
J
=125
°
C
I
D
= 9.5 A
15
20
23
28
20
28
33
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
660
170
90
2.3
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 Mv, f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
9
5
24
4
6.7
2.1
2.7
18
10
38
8
9.4
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 9.5 A,
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6612A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| FDD6612A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252 |
| FDD6612A_F054 | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel |
| FDD6612A_OLDDI | 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH |
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