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參數資料
| 型號： | FDD6630A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench⑩ MOSFET |
| 中文描述： | 21 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 147K |
| 代理商： | FDD6630A |
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
164mm
13” Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
See detail AA
Dim A
max
13” Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Component Rotation
User Direction of Feed
D-PAK (TO-252) Embossed Carrier
Tape Configuration:
Figure 3.0
D-PAK (TO-252) Reel
Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
TO252
(24mm)
6.90
+/-0.10
10.50
+/-0.10
16.0
+/-0.3
1.55
+/-0.05
1.5
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.10
8.0
+/-0.1
4.0
+/-0.1
2.65
+/-0.10
0.30
+/-0.05
13.0
+/-0.3
0.06
+/-0.02
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6630A_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench?? MOSFET |
| FDD6632 | 功能描述:MOSFET 30V 9a 0.090Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6632_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз |
| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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