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參數資料
| 型號： | FDD6676AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 120K |
| 代理商： | FDD6676AS |
FDD6676AS Rev A(X)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 16A
108
250
16
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
30
V
Breakdown Voltage Temperature
31
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
=125
°
C
V
GS
= ±20 V,
V
DS
= 0 V
500
±100
μ
A
mA
nA
11
I
GSS
Gate–Body Leakage
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
1
1.5
3
V
Gate Threshold Voltage
–3.6
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 16 A,T
J
=125
°
C
V
DS
= 5 V,
I
D
= 16 A
4.7
5.8
6.7
61
5.7
7.1
8.4
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
2500
710
270
1.6
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 0 V, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge, Vgs = 10V
Q
g
Total Gate Charge, Vgs = 5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
12
46
28
20
24
35
27
46
25
7
9
21
22
74
44
32
38
56
43
64
35
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
I
D
= 16 A
F
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| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDD6676S | 30V N-Channel PowerTrench MOSFET |
| FDD6676 | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6676AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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