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參數資料
| 型號： | FDD6676AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 120K |
| 代理商： | FDD6676AS |
FDD6676AS Rev A(X)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 78A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
f = 1MHz
V
GS
= 0 V
C
rss
C
oss
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 96°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDD6676S | 30V N-Channel PowerTrench MOSFET |
| FDD6676 | 30V N-Channel PowerTrench MOSFET |
| FDD6680A | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6680S | 30V N-Channel PowerTrench SyncFET⑩ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6676AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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