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參數(shù)資料
型號(hào): FDD6680A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel, Logic Level, PowerTrench MOSFET
中文描述: 14 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 1/8頁
文件大小: 200K
代理商: FDD6680A
F
FDD6680A, Rev. C
FDD6680A
N-Channel, Logic Level, PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
February 2000
Features
56 A, 30 V. R
DS(ON)
= 0.0095
@ V
GS
= 10 V
R
DS(ON)
= 0.0130
@ V
GS
= 4.5 V.
Low gate charge ( 23nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
2000 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
56
14
100
60
2.8
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
(Note 1)
(Note 1a)
Maximum Drain Current - Pulsed
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
2.1
96
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDD6680A
FDD6680A
Reel Size
13
’’
Tape width
16mm
Quantity
2500
相關(guān)PDF資料
PDF描述
FDD6680S 30V N-Channel PowerTrench SyncFET⑩
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FDD6690 N-Channel, Logic Level, PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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