- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375772 > FDD6685 (FAIRCHILD SEMICONDUCTOR CORP) 30V P-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDD6685 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 11 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 116K |
| 代理商： | FDD6685 |
February 2004
2004 Fairchild Semiconductor Corporation
FDD6685 Rev D (W)
FDD6685
30V P-Channel PowerTrench
ò
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
–40 A, –30 V. R
DS(ON)
= 20 m
@ V
GS
= –10 V
R
DS(ON)
= 30 m
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Qualified to AEC Q101
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–
30
±
25
–
40
–
11
–
100
52
3.8
1.6
–
55 to +175
Units
V
V
Continuous Drain Current @T
C
=25°C
(Note 3)
(Note 1a)
@T
A
=25°C
Pulsed, PW
≤
100μs
(Note 1b)
A
(Note 1)
(Note 1a)
P
D
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.9
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD6688S | 30V N-Channel PowerTrench SyncFET |
| FDD6690A | N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDD6690 | N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDD6696 | 30V N-Channel PowerTrench MOSFET |
| FDU6696 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6685 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD6685_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET |
| FDD6688 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6688S | 功能描述:MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6690 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。