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參數資料
型號: FDD6685
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V P-Channel PowerTrench MOSFET
中文描述: 11 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: TO-252, 3 PIN
文件頁數: 4/6頁
文件大小: 116K
代理商: FDD6685
FDD6685 Rev D (W)
Typical Characteristics
0
10
20
30
40
0
1
2
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-6.0V
-5.0V
-4.5V
-3.5V
V
GS
= -10V
-4.0V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
N
D
V
GS
= -3.5V
-5.0V
-6.0V
-8.0V
-10V
-4.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= -11.0A
V
GS
= -10V
0
0.02
0.04
0.06
0.08
2
4
8
10
-V
GS
, GATE TO SO6
R
D
,
I
D
= -5.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數
參數描述
FDD6685 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD6685_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET
FDD6688 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6688S 功能描述:MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6690 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET
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