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參數資料
| 型號： | FDD6685 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 11 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 116K |
| 代理商： | FDD6685 |
FDD6685 Rev D (W)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDD6685
FDD6685
13”
12mm
2500 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 4)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AS
Maximum Drain-Source
Avalanche Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
I
D
= –11 A
42
mJ
–11
A
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–24
mV/
°
C
V
DS
= –24 V,
V
GS
= ±25V,
V
GS
= 0 V
V
DS
= 0 V
–1
±100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V,
I
D
= –11 A
V
GS
= –4.5 V,
I
D
= –9 A
V
GS
= –10 V,I
D
= –11 A,T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –11 A
–1
–1.8
5
–3
V
mV/
°
C
14
21
20
26
20
30
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1715
440
225
3.6
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
17
11
43
21
17
9
4
31
21
68
34
24
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15V,
V
GS
= –5 V
I
D
= –11 A,
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
Trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= –3.2 A
(Note 2)
–0.8
–1.2
V
26
13
ns
nC
IF = –11 A,
diF/dt = 100 A/μs
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6685 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD6685_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET |
| FDD6688 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6688S | 功能描述:MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6690 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET |
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