- 您現在的位置：買賣IC網 > PDF目錄375772 > FDD6680A (FAIRCHILD SEMICONDUCTOR CORP) N-Channel, Logic Level, PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDD6680A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 14 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 200K |
| 代理商： | FDD6680A |
F
FDD6680A, Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 15 V, I
D
= 56 A
200
mJ
56
A
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
=250
μ
A,Referenced to 25
°
C
30
V
23
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
=250
μ
A,Referenced to 25
°
C
1
1.5
-4
3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 14 A
V
GS
= 10 V,I
D
=14 A,T
J
=125
°
C
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 5 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 14 A
0.008
0.012
0.010
0.0095
0.0160
0.0130
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
50
A
S
41
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2180
500
255
pF
pF
pF
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
13
14
43
15
23
7
11
24
26
70
27
33
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 14 A,
V
GS
= 5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
2.3
1.2
A
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.72
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) R
θ
JA
= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W on a minimum
mounting pad.
相關PDF資料 |
PDF描述 |
|---|---|
| FDD6680S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDD6685 | 30V P-Channel PowerTrench MOSFET |
| FDD6688S | 30V N-Channel PowerTrench SyncFET |
| FDD6690A | N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDD6690 | N-Channel, Logic Level, PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6680A_NBRZ002 | 制造商:Fairchild 功能描述:30V N-CA FET 95MO LF |
| FDD6680A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A_SBRZ001A | 制造商:Fairchild 功能描述:30V N-CH FET, 95 MO |
| FDD6680AS | 功能描述:MOSFET 30V NCH DPAK POWR TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
發布緊急采購，3分鐘左右您將得到回復。