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參數(shù)資料
| 型號： | FDD8580 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 20V, 35A, 9mohm |
| 中文描述： | 35 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 320K |
| 代理商： | FDD8580 |
tm
July 2006
F
2006 Fairchild Semiconductor Corporation
FDD8580/FDU8580 Rev. A
www.fairchildsemi.com
1
FDD8580/FDU8580
N-Channel PowerTrench
MOSFET
20V, 35A, 9m
Ω
Features
Max r
DS(on)
=
9m
Ω
at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
13m
Ω
at V
GS
= 4.5V, I
D
= 33A
Low gate charge: Q
g(TOT)
= 19nC(Typ), V
GS
= 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
20
±20
35
58
159
66
49.5
-55 to 175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case TO-252,TO-251
3.03
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
100
52
Device Marking
FDD8580
FDU8580
Device
FDD8580
FDU8580
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
Tape Width
12mm
N/A
Quantity
2500 units
75 units
I-PAK
(TO-251AA)
G D S
D
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD8586 | 功能描述:MOSFET 20V 35A 5.5 OHM NCH DPAK PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD86102 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD86102LZ | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD86102LZ_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100 V, 35 A, 22.5 m?? |
| FDD86110 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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