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參數(shù)資料
| 型號(hào)： | FDFMA2N028Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 360K |
| 代理商： | FDFMA2N028Z |
F
FDFMA2N028Z Rev.B
www.fairchildsemi.com
5
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
I
D
= 3.7A
V
DD
= 10V
V
DD
= 5V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
100
1000
20
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance Characteristics
Figure 9.
0.1
1
10
0.01
0.1
1
10
60
20
100us
10s
DC
r
DS(on)
LIMIT
1ms
10ms
100ms
1s
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
V
GS
=4.5V
SINGLE PULSE
R
θ
JA
=
173
T
A
=
25
o
C
o
C/W
Forward Bias Safe
Operating Area
Figure 10.
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
0
10
20
30
40
50
SINGLE PULSE
R
θ
JA
= 173
T
A
=25
o
C/W
o
C
SINGLE PULSE
P
(
P
)
,
Single Pulse Maximum
Power Dissipation
Figure 11.
0
200
400
600
800
0.001
0.01
0.1
1
10
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
F
F
V
F,
FORWARD VOLTAGE(mV)
Schottky Diode Forward Current
Figure 12.
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
R
,
V
R
, REVERSE VOLTAGE (V)
Schottky Diode Reverse Current
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFMA2N028Z_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ |
| FDFMA2P029Z | 功能描述:MOSFET -20V P-Channel PT MFET_SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P029Z_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m |
| FDFMA2P853 | 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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