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參數資料
| 型號： | FDFMC2P120 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA |
| 封裝： | 3 X 3 MM, 0.80 MM HEIGHT, MLP-6 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 123K |
| 代理商： | FDFMC2P120 |
July 2005
FDFMC2P120
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
2005 Fairchild Semiconductor Corporation
FDFMC2P120 Rev.E (W)
General Description
FDFMC2P120 combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
Buck Boost
Features
–2 A, –20 V
R
DS(ON)
= 125 m
@ V
GS
= –4.5 V
R
DS(ON)
= 200 m
@ V
GS
= –2.5 V
Low Profile – 0.8mm maximum – in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
V
RRM
Schottky Repetitive Peak Reverse Voltage
I
O
Schottky Average Forward Current
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–3.5
–10
20
2
2.4
1.2
–55 to +150
Units
V
V
A
V
A
W
°
C
(Note 1a)
(Note a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
145
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2P120
FDFMC2P120
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
6 5 4
BOTTOM
MLP 3x3
PIN 1 2 3
TOP
NC
S
S
A
A
G
3
2
1
4
5
6
TO BOTTOM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFME3N311ZT | 功能描述:MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMJ2P023Z | 功能描述:MOSFET -20V Integrated P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMM-TTL-100F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog Miscellaneous |
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