- 您現在的位置：買賣IC網 > PDF目錄375773 > FDFMC2P120 (FAIRCHILD SEMICONDUCTOR CORP) Integrated P-Channel PowerTrench MOSFET and Schottky Diode PDF資料下載
參數資料
| 型號： | FDFMC2P120 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA |
| 封裝： | 3 X 3 MM, 0.80 MM HEIGHT, MLP-6 |
| 文件頁數： | 5/7頁 |
| 文件大小： | 123K |
| 代理商： | FDFMC2P120 |
FDFMC2P120 Rev.E (W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -3.5A
V
DS
= -5V
-15V
-10V
0
100
200
300
400
500
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, FORWARD VOLTAGE (V)
I
F
,
T
J
= 25
o
C
T
J
= 125
o
C
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current .
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=145 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDFS2P102A | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFS2P102 | FETKEY P-Channel MOSFET with Schottky Diode |
| FDFS2P103 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFS2P103A | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDFS2P106A | Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFME3N311ZT | 功能描述:MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMJ2P023Z | 功能描述:MOSFET -20V Integrated P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMM-TTL-100F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog Miscellaneous |
發布緊急采購，3分鐘左右您將得到回復。