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參數資料
| 型號： | FDFMA3N109 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 129K |
| 代理商： | FDFMA3N109 |
May 2006
FDFMA3N109
Integrated N-Channel PowerTrench
MOSFET and Schottky Diode
2006 Fairchild Semiconductor Corporation
FDFMA3N109 Rev B(W)
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
Features
MOSFET:
2.9 A, 30 V R
DS(ON)
= 123 m
@ V
GS
= 4.5 V
R
DS(ON)
= 140 m
@ V
GS
= 3.0 V
R
DS(ON)
= 163 m
@ V
GS
= 2.5 V
Schottky:
V
F
< 0.46 V @ 500mA
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous (T
C
= 25°C, V
GS
= 4.5V)
– Continuous (T
C
= 25°C, V
GS
= 2.5V)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1b)
T
J
, T
STG
Operating and Storage Temperature
V
RRM
Schottky Repetitive Peak Reverse Voltage
I
O
Schottky Average Forward Current
Parameter
Ratings
30
±
12
2.9
2.7
10
1.5
0.65
–55 to +150
28
1
Units
V
V
I
D
A
W
°
C
V
A
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
83
193
101
228
°C/W
Package Marking and Ordering Information
Device Marking
Device
109
FDFMA3N109
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET 2x2
A K
NC G
D S
PIN 1
A NC D
K
D
K G S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMC2P120 | 功能描述:MOSFET -20V Integr P-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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