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參數資料
| 型號： | FDFMA3N109 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 129K |
| 代理商： | FDFMA3N109 |
FDFMA3N109 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is
determined by the user's board design.
(a)
MOSFET R
θ
JA
= 83°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b)
MOSFET R
θ
JA
= 193°C/W when mounted on a minimum pad of 2 oz copper
(c)
Schottky R
θ
JA
= 101°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d)
Schottky R
θ
JA
= 228°C/W when mounted on a minimum pad of 2 oz copper
a) 83
o
C/W
when
mounted on
a 1in
2
pad
of 2 oz
copper
b) 193
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
c)101
o
C/W
when
mounted on
a 1in
2
pad
of 2 oz
copper
b) 228
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMC2P120 | 功能描述:MOSFET -20V Integr P-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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