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參數資料
| 型號： | FDFMA2P029Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm |
| 中文描述： | 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 352K |
| 代理商： | FDFMA2P029Z |
F
M
FDFMA2P029Z Rev.B
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
V
GS
=
-3.0V
V
GS
=
-4.5V
V
GS
=
-2.5V
V
GS
=
-1.5V
V
GS
=
-2.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
-
I
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
1
2
3
4
5
6
0.6
1.0
1.4
1.8
2.2
2.6
V
GS
= -3.0V
V
GS
= -3.5V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
=-2.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On-Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -3.1A
V
GS
= -4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
0
2
4
6
8
10
40
80
120
160
200
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -1.55A
r
D
,
S
(
m
Ω
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
DD
= -5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關代理商/技術參數 |
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|---|---|
| FDFMA2P029Z_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m |
| FDFMA2P853 | 功能描述:MOSFET MLP 2X2 DUAL INTEGRATED PCH PO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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