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參數(shù)資料
| 型號(hào)： | FDFMA2P853 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 307K |
| 代理商： | FDFMA2P853 |
F
FDFMA2P853 Rev. C (W)
3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by
design while R
θ
JA
is determined by the user's board design.
(a) MOSFET R
θ
JA
= 86°C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(b) MOSFET R
θ
JA
= 173°C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky R
θ
JA
= 86°C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(d) Schottky R
θ
JA
= 140°C/W when mounted on a minimum pad of 2 oz copper
a) 86
o
C/W
when
mounted
on a 1in
2
pad of 2 oz
copper
b) 173
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
Scale 1: 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
c) 86
o
C/W
when
mounted
on a 1in
2
pad of 2 oz
copper
d) 140
o
C/W
when
mounted on
a minimum
pad of
2 oz copper
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P857 | 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDFMA2P857_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ |
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