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參數資料
| 型號： | FDG330P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 47PF 1KVDC U2J 1206 |
| 中文描述： | 2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 150K |
| 代理商： | FDG330P |
December 2001
2001 Fairchild Semiconductor Corporation
FDG330P Rev D (W)
FDG330P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–2 A, –12 V.
R
DS(ON)
= 110 m
@ V
GS
= –4.5 V
R
DS(ON)
= 150 m
@ V
GS
= –2.5 V
R
DS(ON)
= 215 m
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
SC70-6
D
D
G
D
D
S
Pin 1
3
5
6
4
1
2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–12
±
8
–2
–6
0.75
0.48
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.30
FDG330P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG330P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG330P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG332PZ | 功能描述:MOSFET -20V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG361N | 功能描述:MOSFET N-Ch PowerTrench Specified 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-G4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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