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參數資料
| 型號： | FDG330P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 47PF 1KVDC U2J 1206 |
| 中文描述： | 2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 150K |
| 代理商： | FDG330P |
FDG330P Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–12
V
Breakdown Voltage Temperature
–2.7
mV/
°
C
V
DS
= –10 V, V
GS
= 0 V
V
GS
= 8 V,
V
GS
= –8 V,
–1
100
–100
μ
A
nA
nA
V
DS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –2.0 A
V
GS
= –2.5 V, I
D
= –1.7 A
V
GS
= –1.8 V, I
D
= –1.4 A
V
GS
= –4.5 V, I
D
= –2.0 A, T
J
= 125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.0 A
I
D
= –250
μ
A
–0.4
–0.7
2.3
–1.5
V
Gate Threshold Voltage
mV/
°
C
84
107
145
98
6.8
110
150
215
148
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–6
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
477
186
124
pF
pF
pF
V
DS
= –6.0 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
11
12
18
5
0.8
1.4
20
20
22
32
7
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6.0 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= 1 A,
V
DS
= –6.0 V,
V
GS
= –4.5 V
I
D
= –2.0 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.62
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.62 A
(Note 2)
–0.7
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a.) 170°C/W when mounted on a 1 in
2
pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG330P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG330P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG332PZ | 功能描述:MOSFET -20V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG361N | 功能描述:MOSFET N-Ch PowerTrench Specified 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-G4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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