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參數資料
| 型號： | FDG332PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97mヘ |
| 中文描述： | 2.6 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-70, 6 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 374K |
| 代理商： | FDG332PZ |
F
M
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250
μ
A, V
GS
= 0V
-20
V
I
D
= -250
μ
A, referenced to 25°C
-13
mV/°C
V
DS
= -16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
-1
±10
μ
A
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μ
A
-0.4
-0.7
-1.5
V
I
D
= -250
μ
A, referenced to 25°C
2.5
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -4.5V, I
D
= -2.6A
V
GS
= -2.5V, I
D
= -2.2A
V
GS
= -1.8V, I
D
= -1.9A
V
GS
= -1.5V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -2.6A , T
J
= 125°C
V
DD
= -5V, I
D
= -2.6A
73
90
117
147
100
9
95
115
160
3
3
0
133
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10V, V
GS
= 0V, f = 1MHZ
420
85
75
560
115
115
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
DD
= -10V, I
D
= -2.6A,
V
GS
= -4.5V, R
GEN
= 6
5.2
4.8
59
28
7.6
0.9
1.9
10
10
95
45
10.8
ns
ns
ns
ns
nC
nC
nC
V
GS
= -4.5V, V
DD
= -10V, I
D
= -2.6A
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-0.6
-1.2
45
13
A
V
ns
nC
V
GS
= 0V, I
S
= -0.6A (Note 2)
-0.7
28
8
I
F
= 2.6A, di/dt = 100A/
μ
s
and Maximum Ratings
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 170°C/W when mounted on
a 1 in
pad of 2 oz copper .
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
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