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參數資料
| 型號： | FDG332PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97mヘ |
| 中文描述： | 2.6 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SC-70, 6 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 374K |
| 代理商： | FDG332PZ |
F
M
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
Figure 7.
0
2
4
6
8
0.0
1.5
3.0
4.5
I
D
= -2.6A
V
DD
= -15V
V
DD
= -5V
-
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= -10V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
20
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.1
1
10
0.01
0.1
1
10
10s
DC
1s
100ms
10ms
1ms
100us
THIS AREA IS
LIMITED BY r
DS(on)
50
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 260
o
C/W
T
A
=
25
o
C
-
D
,
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Figure 10.
0
5
10
15
20
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
GS
= 0V
T
J
= 25
o
C
T
J
= 150
o
C
-V
GS,
GATE TO SOURCE VOLTAGE (V)
-
g
,
G
Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.1
1
10
100
P
(
,
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 260
o
C/W
T
A
= 25
o
C
t, PULSE WIDTH (s)
Typical Characteristics
T
J
= 25°C unless otherwise noted
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