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參數資料
| 型號： | FDH45N50F_0605 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 500V N-Channel MOSFET, FRFET |
| 中文描述： | 500V N溝道MOSFET，FRFET |
| 文件頁數： | 1/7頁 |
| 文件大小： | 1050K |
| 代理商： | FDH45N50F_0605 |
2006 Fairchild Semiconductor Corporation
FDH45N50F Rev. B
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDH45N50
F
500V N-Channel MOSFET, FRFET
Features
45A, 500V, R
DS(on)
= 0.12
Ω
@V
GS
= 10 V
Low gate charge ( typical 105 nC)
Low C
rss
( typical 62 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
G
S
D
TO-247
FDH Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDH45N50F
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
45
28.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
180
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
Avalanche Current
(Note 1)
45
A
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
625
5
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.2
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDH50N50 | 功能描述:MOSFET 500V N-Channel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDH50N50_F133 | 功能描述:MOSFET N-CH/500V/50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDH50SG | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS |
| FDH50T | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:.050 IDC CONNECTORS DUAL ROW SOCKETS & TRANSITION PLUGS |
| FDH-50-T | 功能描述:集管和線殼 50 pos. IDC FOUR ROW TRANSITION PLUG RoHS:否 產品種類:1.0MM Rectangular Connectors 產品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節距:1 mm 位置/觸點數量:16 排數:1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector |
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