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參數資料
| 型號： | FDH45N50F_0605 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 500V N-Channel MOSFET, FRFET |
| 中文描述： | 500V N溝道MOSFET，FRFET |
| 文件頁數： | 4/7頁 |
| 文件大小： | 1050K |
| 代理商： | FDH45N50F_0605 |
4
www.fairchildsemi.com
FDH45N50F Rev. B
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 22.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
I
D
,
T
C
, Case Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
DC
1 ms
10
μ
s
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
dv/dt(off)
dv/dt(on)
d
R
G
, Gate resistance [
Ω
]
0
5
10
15
20
25
30
35
40
45
50
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
di/dt(off)
di/dt(on)
d
μ
S
R
G
, Gate resistance [
Ω
]
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