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參數資料
| 型號： | FDH45N50F_0605 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 500V N-Channel MOSFET, FRFET |
| 中文描述： | 500V N溝道MOSFET，FRFET |
| 文件頁數： | 3/7頁 |
| 文件大小： | 1050K |
| 代理商： | FDH45N50F_0605 |
3
www.fairchildsemi.com
FDH45N50F Rev. B
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0
20
40
60
80
100
120
140
160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
o
C
R
D
Ω
]
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
o
C
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0
20
40
60
80
100
120
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 48A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
2000
4000
6000
8000
10000
12000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
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