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參數(shù)資料
| 型號(hào)： | FDH50N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 48 A, 500 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 222K |
| 代理商： | FDH50N50 |
4
www.fairchildsemi.com
FDH50N50 / FDA50N50 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 24 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10 us
DC
10 ms
1 ms
100 us
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
50
I
D
,
T
C
, Case Temperature [
o
C]
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
!
dv/dt(off)
dv/dt(on)
d
R
G
, Gate resistance [
]
0
5
10
15
20
25
30
35
40
45
50
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
di/dt(off)
di/dt(on)
d
μ
S
R
G
, Gate resistance [
]
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