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參數資料
| 型號： | FDI038AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 80A, 3.8mз |
| 中文描述： | 17 A, 60 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB |
| 封裝： | TO-262AB, 3 PIN |
| 文件頁數： | 4/10頁 |
| 文件大?。?/td> | 280K |
| 代理商： | FDI038AN06A0 |
2002 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
100
2000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
0.01
10
100
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
40
80
120
160
3.0
3.5
4.0
4.5
5.0
5.5
6
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 175
o
C
0
40
80
120
160
0
0.5
1.0
1.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 6V
3
4
5
0
20
40
60
80
6
I
D
, DRAIN CURRENT (A)
D
)
V
GS
= 6V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
200
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相關代理商/技術參數 |
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| FDI038AN06A0_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 80A, 3.8m?? |
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| FDI038N06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench? MOSFET 60V, 168A, 4.0mW |
| FDI040N06 | 功能描述:MOSFET PT3 Low Qg 60V, 4.0Mohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDI045N10A | 功能描述:MOSFET N-CH 100V 120A I2PAK-3 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:PowerTrench® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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