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參數資料
| 型號： | FDI12N50TU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
| 中文描述： | 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 311K |
| 代理商： | FDI12N50TU |
F
FDB12N50TM
Rev. A
1
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperature
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
2000
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
4
6
8
10
0.1
1
10
40
-55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
1
10
1
10
20
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
I
D
,
V
DS
,Drain-Source Voltage[V]
30
0
5
10
15
20
25
0.4
0.6
0.8
1.0
1.2
1.4
*Note: T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
Ω
]
,
D
I
D
, Drain Current [A]
0.3
0.6
0.9
1.2
1.5
1.8
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0.1
1
10
0
500
1000
1500
C
oss
C
iss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
30
0
5
10
15
20
25
0
2
4
6
8
10
*Note: I
D
= 11.5A
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
V
G
,
Q
g
, Total Gate Charge [nC]
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