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參數資料
| 型號： | FDM3622 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 4.4 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 231K |
| 代理商： | FDM3622 |
2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
www.fairchildsemi.com
F
N
3
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1.
R
is determined with the device mounted on a 1in
2
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is
determined by the user’s board design.
(a)
.
R
θ
JA
= 52°C/W when mounted on a 1in
2
pad of 2 oz. copper.
(b). R
θ
JA
= 108°C/W when mounted on a minimum pad of 2 oz. copper
2.
Starting T
J
=
25°C, L = 31mH, I
AS
= 3.5A, V
DD
= 100V
V
DD
= 50V, I
D
= 4.4A
V
GS
= 10V, R
GS
= 24
-
-
-
-
-
-
-
54
-
-
-
-
92
ns
ns
ns
ns
ns
ns
11
25
35
26
-
V
SD
Source to Drain Diode Voltage
I
SD
= 4.4A
I
SD
= 2.2A
I
SD
= 4.4A, dI
SD
/dt = 100A/
μ
s
I
SD
= 4.4A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
56
108
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDM3622_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ |
| FDM3622_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 4.4A, 60m?? |
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