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參數資料
型號: FDM3622
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 4.4 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3.30 X 3.30 MM, LEAD FREE, MLP-8
文件頁數: 5/11頁
文件大小: 231K
代理商: FDM3622
2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
www.fairchildsemi.com
F
N
5
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
1
10
120
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1ms
100
μ
s
10ms
1
10
0.001
0.01
0.1
1
10
100
20
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
2
4
6
8
10
3.0
3.5
4.0
4.5
5.0
5.5
6.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 10V
V
GS
= 4.7V
40
50
60
70
80
4
6
8
10
I
D
= 0.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 4.4A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 4.4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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