- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375776 > FDMA2002NZ (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDMA2002NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 131K |
| 代理商： | FDMA2002NZ |
May 2006
May 2006
FDMA2002NZ
Dual N-Channel PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDMA2002NZ Rev B(W)
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The
MicroFET
2x2
offers
performance for its physical size and is well suited to
linear mode applications.
exceptional
thermal
Features
2.9 A, 30 V R
DS(ON)
= 123 m
@ V
GS
= 4.5 V
R
DS(ON)
= 140 m
@ V
GS
= 3.0 V
R
DS(ON)
= 163 m
@ V
GS
= 2.5 V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous (T
C
= 25°C, V
GS
= 4.5V)
– Continuous (T
C
= 25°C, V
GS
= 2.5V)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1b)
T
J
, T
STG
Operating and Storage Temperature
Parameter
Ratings
30
±
12
2.9
2.7
10
1.5
0.65
–55 to +150
Units
V
V
I
D
A
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
83 (Single Operation)
193 (Single Operation)
68 (Dual Operation)
145 (Dual Operation)
(Note 1b)
(Note 1c)
(Note 1d)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
002
FDMA2002NZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET 2x2
S1
G1
D1
S2
G2
D2
D1 G2 S2
D1 D2
PIN 1
S1 G1 D2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMA291P | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| FDMA420NZ_0609 | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
| FDMA420NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m Ohm |
| FDMA430NZ_0609 | Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз |
| FDMA430NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA291P | 功能描述:MOSFET -20V Single P-Ch. PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA291P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 1.8V Specified PowerTrench㈢ MOSFET |
| FDMA2P857 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA3023PZ | 功能描述:MOSFET 30V 2.9A Dual P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。