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參數資料
| 型號： | FDMA2002NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 4/7頁 |
| 文件大小： | 131K |
| 代理商： | FDMA2002NZ |
FDMA2002NZ Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
2.0V
V
GS
= 4.5V
3.5V
2.9V
1.5V
2.7V
0.8
1
1.2
1.4
1.6
1.8
0
2
6
8
10
I
D
, D4
R
D
,
D
V
GS
= 2.0V
4.0V
3.5V
4.5V
2.5V
2.9V
2.7V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= 2.9A
V
GS
= 4.5V
0.04
0.08
0.12
0.16
0.2
0.24
0
2
6
8
10
V
GS
, GATE 4
R
D
,
I
D
= 1.45A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA291P | 功能描述:MOSFET -20V Single P-Ch. PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA291P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 1.8V Specified PowerTrench㈢ MOSFET |
| FDMA2P857 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA3023PZ | 功能描述:MOSFET 30V 2.9A Dual P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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