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參數(shù)資料
| 型號(hào)： | FDMC2674_07 |
| 廠(chǎng)商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| 中文描述： | N溝道UltraFET溝道MOSFET 220，7.0A，三六六米ヘ |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | FDMC2674_07 |
F
M
FDMC2674 Rev.F
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 4.5V
V
GS
= 7V
V
GS
= 5V
V
GS
= 10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0.5
1.0
1.5
2.0
2.5
3.0
0.8
1.0
1.2
1.4
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
V
GS
= 7V
V
GS
= 5.0V
V
GS
= 4.5V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.4
0.8
1.2
1.6
2.0
2.4
I
D
= 1A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
4
8
12
16
20
0.2
0.3
0.4
0.5
0.6
0.7
0.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 1A
R
D
,
S
(
Ω
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
1
2
3
4
V
DD
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.3
0.6
0.9
1.2
1E-4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
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