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參數資料
| 型號： | FDMC2674_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| 中文描述： | N溝道UltraFET溝道MOSFET 220，7.0A，三六六米ヘ |
| 文件頁數： | 4/7頁 |
| 文件大小： | 198K |
| 代理商： | FDMC2674_07 |
F
M
FDMC2674 Rev.F
www.fairchildsemi.com
4
Figure 7.
0
3
6
9
12
15
0
2
4
6
8
10
V
DD
= 100V
V
G
,
Q
g
, GATE CHARGE(nC)
I
D
= 1A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
100
1000
5
f =
1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
2000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
0.1
1
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
(
A
)
2
t
AV
, TIME IN AVALANCHE(ms)
Unclamped Inductive
Switching Capability
Figure 10.
0.1
1
10
100
1000
1E-3
0.01
0.1
1
10
10s
DC
1s
100ms
10ms
1ms
100us
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
r
D
S(on)
LIMITED
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
30
Figure 11. Single Pulse Maximum Power Dissipation
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
SINGLE PULSE
R
θ
JA
= 135
o
C/W
0.5
P
(
P
)
,
t, PULSE WIDTH (s)
500
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMC3020DC | 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC3300NZA | 功能描述:MOSFET 20V 8A 26 OHM MONOLITHIC COMM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC3300NZA_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ |
| FDMC3612 | 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC4435BZ | 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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