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參數(shù)資料
| 型號： | FDMS9620S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ |
| 中文描述： | 7.5 A, 30 V, 0.0215 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 286K |
| 代理商： | FDMS9620S |
F
M
2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D
www.fairchildsemi.com
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
2.1
3.5
1.2
1.0
A
V
SD
Source to Drain Diode Forward VoltageV
GS
= 0V, I
S
= 2.1A (Note 2)
V
GS
= 0V, I
S
= 3.5A (Note 2)
Q1
I
F
= 7.5A, di/dt = 100A/
μ
s
Q2
I
F
= 10A, di/dt = 300A/
μ
s
0.7
0.5
13
14
4
9
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
nC
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a.50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 120°C/W when mounted on a
minimum pad of 2 oz copper
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS9620S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMW2512NZ | 功能描述:MOSFET 2.5V NCH MONOLITHIC COMON DR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN 304P | 制造商:Fairchild Semiconductor 功能描述:Bulk |
| FDN 337N | 制造商:Fairchild Semiconductor 功能描述:Bulk |
| FDN 338P | 制造商:Fairchild Semiconductor 功能描述:Bulk |
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