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參數資料
| 型號： | FDMS9620S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ |
| 中文描述： | 7.5 A, 30 V, 0.0215 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 286K |
| 代理商： | FDMS9620S |
F
M
2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D
www.fairchildsemi.com
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
0
2
4
6
8
10
12
0
2
4
6
8
10
I
D
= 7.5A
V
DD
= 20V
V
DD
= 15V
V
DD
=10V
Q
g
,
GATE CHARGE(nC)
V
G
,
G
0.1
1
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
0.1
1
10
100
0.01
0.1
1
10
100
DC
10s
1s
100ms
10ms
1ms
SINGLE PULSE
T
J
= MAX RATE
R
θ
JA
= 120
o
C
T
A
= 25
o
C
THIS AREA IS LIMITED
BY r
DS(ON)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
I
D
,
D
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
1
10
100
0.5
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 120
o
C/W
T
A
= 25
o
C
P
(
P
)
,
P
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θ
JA
= 120
o
C/W
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS9620S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMW2512NZ | 功能描述:MOSFET 2.5V NCH MONOLITHIC COMON DR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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