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參數(shù)資料
| 型號： | FDN358P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 85K |
| 代理商： | FDN358P |
FDN358P Rev.D
0
1
2
3
4
5
0
2
4
6
8
10
-V , DRAIN-SOURCE VOLTAGE (V)
-
V = -10V
-5.0
D
-4.0
-3.0
-3.5
-6.0
-4.5
0
2
4
6
8
10
1
1.5
2
2.5
-I , DRAIN CURRENT (A)
D
V = -4.0V
R
D
-6.0
-5.0
-4.5
-10
-7.0
-8.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -1.5A
Figure 3. On-Resistance Variation
with Temperature
.
1
2
3
4
5
6
0
2
4
6
8
10
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5V
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
-
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
-V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 125°C
A
T = 25°C
I = 0.75A
D
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN358P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN358P_G | 制造商:Fairchild 功能描述:Single Pch, Logic Level, Power |
| FDN358P_Q | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN358P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN358P Series 30V 125 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
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