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參數(shù)資料
型號(hào): FDN5618
廠商: Fairchild Semiconductor Corporation
英文描述: 60V P-Channel Logic Level PowerTrench MOSFET
中文描述: 60V的P通道MOSFET的邏輯電平的PowerTrench
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 385K
代理商: FDN5618
FDN5618P Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-4.5V
-6.0V
-2.5V
-4.0V
-3.5V
V
GS
= -10V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
V
GS
= -3.0V
-4.0V
-10V
-4.5V
-6.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -1.25A
V
GS
= -10V
0.1
0.2
0.3
0.4
0.5
0.6
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -0.65 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125
o
C
25
o
C
V
DS
= - 5V
-55
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN5618P 功能描述:MOSFET SSOT-3 P-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN5618P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
FDN5618P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDN5618P Series 60 V 0.170 Ohm P-Channel Logic Level PowerTrench Mosfet SSOT-3
FDN5630 功能描述:MOSFET SSOT-3 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN5630 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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