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參數資料
| 型號： | FDP33N25 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 790K |
| 代理商： | FDP33N25 |
2006 Fairchild Semiconductor Corporation
FDP33N25 Rev A
1
www.fairchildsemi.com
F
July
2006
UniFET
TM
FDP33N25
250V N-Channel MOSFET
Features
33A, 250V, R
DS(on)
= 0.094
Ω
@V
GS
= 10 V
Low gate charge ( typical 36.8 nC)
Low C
rss
( typical 39 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
TO-220
FDP Series
G
S
D
Absolute Maximum Ratings
Symbol
Parameter
FDP33N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
33
20.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
132
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
918
mJ
Avalanche Current
(Note 1)
33
A
Repetitive Avalanche Energy
(Note 1)
23.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
235
1.89
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.53
°
C/W
Thermal Resistance, Case-to-Sink
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP33N25_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDP34N33 | 功能描述:MOSFET N-CH 330V 34A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:* 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| FDP3632 | 功能描述:MOSFET 100V 80a .9 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3632_G | 制造商:Fairchild 功能描述:TO-220,SINGLE,NCH,100V,99M OHM |
| FDP3632_NL | 制造商:Fairchild 功能描述:100V/80A N-CH MOSFET |
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