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參數資料
| 型號： | FDP3651U |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM |
| 中文描述： | 80 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 302K |
| 代理商： | FDP3651U |
July
2006
F
2006 Fairchild Semiconductor Corporation
FDP3651U Rev. A
www.fairchildsemi.com
1
FDP3651U
N-Channel PowerTrench
MOSFET
100V, 80A, 15m
Features
r
DS(on)
=13 m
(Typ.), V
GS
= 10V, I
D
= 40A
Q
g(TOT)
=49 nc(Typ.), V
GS
= 10 V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse/Repetitive Pulse)
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
TO-220AB
FDP SERIES
DRAIN
(FLANG
E)
DRAIN
GATE
SOURCE
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
100
±20
80
220
255
266
-55 to 175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed (Note 1)
Power Dissipation
Single Pulsed Avalanche Energy (Note 2)
Operating and Storage Temperature
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
I
D
A
P
D
E
AS
T
J
, T
STG
W
mJ
°
C
T
L
300
°
C
R
θ
JA
R
θ
JC
Thermal Resistance , Junction to Ambient
62
°
C/W
°
C/W
Thermal Resistance , Junction to Case
0.59
Device Marking
FDP3651U
Device
FDP3651U
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP3652 | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3652 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FDP3652_NL | 制造商:Fairchild 功能描述:100V/61A N-CH MOSFET |
| FDP3652_Q | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3672 | 功能描述:MOSFET 105V 41a 0.033 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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