- 您現在的位置：買賣IC網 > PDF目錄375779 > FDP3651U (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM PDF資料下載
參數資料
| 型號： | FDP3651U |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM |
| 中文描述： | 80 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 302K |
| 代理商： | FDP3651U |
F
FDP3651U Rev. A
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DD
= 50V
V
DD
= 55V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 45V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain to Source Voltage
Figure 9.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
T
J
= 25
o
C
T
J
= 150
o
C
I
A
,
(
A
)
t
AV
, TIME IN AVALANCHE(ms)
Unclamped Inductive Switching
Capability
Figure 10.
25
50
TC, CASE TEMPERATURE
(
oC
)
75
100
125
150
175
0
20
40
60
80
100
I
V
GS
=8V
V
GS
=10V
PACKAGE MAY LIMIT
CURRENT IN THIS REGION
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 11.
1
10
100
0.1
1
10
100
10us
500
100us
1ms
10ms
DC
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
=MAX RATED
T
c
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY R
DS(ON)
200
Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
SINGLE PULSE
V
GS
= 10V
P
(
P
)
,
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175
-----150
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關PDF資料 |
PDF描述 |
|---|---|
| FDP3672 | N-Channel PowerTrench MOSFET 105V, 41A, 33mз |
| FDP3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| FDP3682 | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| FDB3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| FDP39N20 | DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP3652 | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3652 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FDP3652_NL | 制造商:Fairchild 功能描述:100V/61A N-CH MOSFET |
| FDP3652_Q | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3672 | 功能描述:MOSFET 105V 41a 0.033 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。